The Proceedings of Ibaraki District Conference
Online ISSN : 2424-2683
ISSN-L : 2424-2683
2018.26
Session ID : 705
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Abrasive-less polishing of SiC using friction of elastic pad
*Kotaro YAMAGUCHINaoya TAKAHASHIYohei YAMADAJunichi IKENOTakeshi ABEToshimasa MANO
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Abstract
The CMP mechanism of SiC can be explained by removing the layer after formation of oxide layer. Nomally, the oxide layer is formed by UV light or oxidezing agent, and its removal is generally performed with abrasive grains. In this report, we proposed a newly polishing process which is not used strong oxidizing agent and abrasive grains but used only PVA pad.
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© 2018 The Japan Society of Mechanical Engineers
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