In general, expensive SiO2 slurry is used for CMP of SiC. The slurry contains an oxidizing agent, and issues remain in terms of environmental impact and cost. In this report, we developed a new polishing method using low-priced zeolite with abundant reserves in Japan. By increasing the number of rotations and increasing the amount of frictional heat generated, the processing became stable and led to the improvement of the removal amount.
