IIP情報・知能・精密機器部門講演会講演論文集
Online ISSN : 2424-3140
セッションID: I-2-3
会議情報
I-2-3 ダイヤモンド基板の窒化物半導体デバイスへの応用 : ダイヤモンド基板の平坦化研磨技術((窒化物半導体デバイスの精密加工プロセス-結晶基板の将来加工技術-,口頭発表)
大山 幸希武田 秀俊曾田 英雄小山 浩司土肥 俊郎
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会議録・要旨集 フリー

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抄録
A heat sink with high thermal conductivity is very important part to achieve high efficient and stablenitride semi conductors,such as an optical device for short wavelength laser.Diamond is one of the candidate materials for extremely high thermal conductive heat sink.However,it is difficult to make the diamondsubstrate surface flat in order to obtain a good contact with the laser chip.This paper focuses on a polish ingcharacteristics in terms of crystal orientation on(100) face.As a result,the highest polishing rate is achieved when the polishing direction is in parallel to the <100> crystal orientation.0n the other hand,the lowestpolishing rate but the smoothest surface is obtained in case of the<110>crystal orientation.
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