抄録
Generally, chrome thin film is used for shading material of a photo mask. Pattern precision of the chrome mask is unstable in chrome wet etching, and process cost and environmental risk increase in chrome dry etching using chlorine gas. In this study, we investigate dry etching method using non-chlorine gas for the Cr mask patterning. Etch selectively between Cr thin film and protective resist treated by vacuum UV cure method were measured in electron cyclotron resonance plasma etching using Ar gas as inert gas.
