Abstract
This paper investigates the stress relief patterns of diamond carbon coatings on silicon mono-crystal by atomistic simulation method. It was found that the nature of the buckling patterns varied with the crystal orientation and the ratio of the residual stresses in the two directions. A telephone-cord like buckling mode took place on the Si (100) surface when the residual stresses were biaxially equal and this is similar to what was observed in micro-scale experiments.
