Abstract
We study the behavior of the crack caused by indentation in the single crystalline silicon deposited by diamond like carbon film. The primary potential locations for the initiation of crack are the substrate close to the contact edge, where high values of shear stress are found. Cone crack are found to initiate from the substrate and to propagate towards the film surface. The initiation and advance of a crack is imprinted on the load-displacement curve as a kink. The cross section of the crack is observed by using focused ion beam (FIB) milling techniques. Bare single crystalline silicon substrate is also investigated to compare the influence of film. Numerical simulations in the elastic analysis are considered to compare with the experiment results.
