Abstract
A new copper interconnect plating process which uses a porous pad with enormous fine through-holes is proposed and examined. Plating with the pad pushed on a wafer surface provides a flat overburden copper film with a lot of tiny posts on a patterned structure. These posts can be removed very easily by chemical etching, and there remains only a flat and minimum overburden copper film without any posts. This copper film can be polished easily and shortly by CMP, and results in a good step property.
