The Proceedings of Conference of Kanto Branch
Online ISSN : 2424-2691
ISSN-L : 2424-2691
2007.13
Session ID : 21708
Conference information
21708 Evaluation of Surface Reactions between Copper and CMP Chemicals Using in-situ Electrochemical Polishing Experiment
Shohei SHIMAAkira FUKUNAGAManabu TSUJIMURA
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Abstract
In-situ potentiodaynamic polarization and open circuit potential evaluation were performed for copper in CMP chemicals. Electrochemical reaction is markedly dependent on CMP chemicals, such as oxidizer, inhibitor, and chelate agents. This is due to the difference in surface chemical reactions (anodic and cathodic) and the formation of surface passivation layer. Low density passivation layer evaluated from AFM force curve grows on copper surface in H2O2 oxidizer. In APS oxidizer, there is no passivation layer on copper. The suppression of anodic reaction in polarization and distinct changes in open circuit potential are clearly observed in BTA inhibitor. This means BTA molecules adsorbs on copper immediately and forms passivation layer, however this layer is not dense. More denser passivation layer grows in chelate agents, such as quinaldic acid and glycine.
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© 2007 The Japan Society of Mechanical Engineers
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