Abstract
VLSI manufacturing process is composed of more than some hundreds processes from Si ingot formation to chip packaging. In every process, Mechanical Eingineering has close relationship with them. Particularly, CMP (Chemical Machanical Polishing) for planarization process, built up on the basis of ultra-precision polishing technology, is essential process for VLSI manufacturing. As an attempt on CMP process research, slurry flow between wafer and polishing pad was investigated with computer analysis and visualized experiments. Basically, slurry flows under the influence of wafer and polishong pad motion, and moreover, grooves on the polishing pad is possible to control the flow of slurry. It suggests that polishing performance is controllable with grooves pattern, and a lodester on optimum grooves pattern design was found.
