Proceedings of International Conference on Leading Edge Manufacturing in 21st century : LEM21
Online ISSN : 2424-3086
ISSN-L : 2424-3086
2003
Conference information
105 Improvement of pad life in mirror polishing for GaAs wafers
Tetsuo OOKAWATakashi NISHIGUCHI
Author information
CONFERENCE PROCEEDINGS FREE ACCESS

Pages 21-26

Details
Abstract
GaAs wafers have contributed greatly to improve the performance of light-receiving and light-emitting devices. For such applications, a very low level of roughness, of the order of 0.1 nmRa, is required on GaAs wafers. If a polishing pad is used for a long time, the polishing rate decreases and the roughness on the wafer increases with increase of polishing time. In this study, the surface morphology of the polishing pad was focused as a dominant factor affecting the polishing rate, and, using an image processing technique, a quantitative approach was tried based on an optical microscope image. For the purpose of increasing the lifetime of polishing pads, a further study was made in which the polishing resistance, which correlates strongly with the polishing rate, was monitored.
Content from these authors
© 2003 The Japan Society of Mechanical Engineers
Previous article Next article
feedback
Top