Abstract
In the present study, flat Si and SiC bulk, and thin layered SiC on Si were prepared and they were processed with micro grooves by UV laser ablation of 355nm wave length. Their surface Hardness and Young's Modulus were tested by Nano-indentation and compensated to obtain real value of their surface integrities. Since both of the Hardness and Young's modulus of SiC thin layer rises once a depth of indentation exceeds the limit of about 1/5 of layer thickness, they can be designed by changing the thickness of SiC layer and can be applicable to attain tough surface for MEMS.
