Abstract
Chemical mechanical polishing (CMP) has been proved to achieve superior global and local planarization in the fabrication of semiconductor devices. Since CMP process depends on numerous complex factors, it is difficult to research a fundamental mechanism, development of consumables and so forth. Therefore, various tirbological approaches have recently been developed to analyze CMP characteristics. In this study, the authors have developed a real-time monitoring system which can measure the friction force. The correlation between the coefficient of friction and the material removal mechanism of abrasives in slurry was discussed with the change of abrasives concentration, type and size during oxide CMP process.
