Abstract
UV-nanoimprint lithography (NIL) is high throughput nano-order replication process; thus, this process is promising for next generation lithography and patterned media and so on. But, lifetime or strain of UV-NIL mold has not been studied yet. Therefore, repeatedly UV-NIL were carried out, strain field of Si mold after UV-NIL were observed by Raman mapping image. As the results, UV-NIL causes almost zero strain in the mold.
