Proceedings of International Conference on Leading Edge Manufacturing in 21st century : LEM21
Online ISSN : 2424-3086
ISSN-L : 2424-3086
2013.7
Session ID : A016
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A016 Statistical Analysis of Plane Honing for Silicon Carbide Wafers
Keita SHIMADAChung-I KUOKensuke TAKAHASHIMasayoshi MIZUTANITsunemoto KURIYAGAWA
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Abstract
Fixed abrasive technology has been required. Plane honing is one of the effective fixed abrasive technologies for processing semiconductor wafers. The paper presents a method to simulate the process of plane honing on the basis of statistical analysis for grinding. To treat a pressure-controlled process, the reference curves of segments were introduced and removal material amount of each segment was assumed as constant. Plane honing experiments were then conducted and the results agreed qualitatively with the simulation results.
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© 2013 The Japan Society of Mechanical Engineers
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