抄録
Silicon dioxide electret induced by highly doped potassium ions will be demonstrated by forming on a comb-drive actuator. The comb-drive actuator made of a silicon on insulator (SOI) substrate is oxidized with bubbling stream of KOH solution to form a silicon oxide film including potassium ions on the etched side-walls of comb electrodes uniformly. After bias-temperature (BT) procedure at about 800 K and 100 V was applied to the device, we have confirmed 40 V built-in potential difference between the opposing comb electrodes. The gradual decay of the potential have been observed, but 35 V built-in potential was maintained even after 1 month.
