抄録
The purpose of this research is to demonstrate a methodology manufacturing a desired depth on silicon which can be used for a mold of transferring to polymer. A gray-scale photolithography technique was demonstrated using deep reactive ion etching (DRIE). The whole photo-lithography process is carried out in two steps: (i) photoresist structure transferred into the silicon using a layout mask, (ii) a silicon mold is formed using gradation exposure through the use of gradation mask and DRIE. The selectivity was 8.1 and the maximum depth reached 30μm.
