抄録
In the photoresist stripping process of semiconductor manufacturing, the cleaning method with the ozone water and a disk-shaped nozzle is proposed in authors' previous studies. Moreover, it is suggested that the three-dimensional flow structure of the ozone water between a rotating silicon wafer and the disk-shaped nozzle affects photoresist stripping rate. The purpose of the present study is to reveal this flow structure. In order to reveal this flow structure, the visualization experiment with dye and CFD analysis are conducted. As a result, the injected dye forms contrasting density, and a high concentrated area is indicated near the disk end. From this result, it is cleared that there is a transition radius of flow structure. The transition radius is different corresponding to experimental conditions. Nevertheless, it is suggested that the transition radius depends on a dimensionless number Re_Ω/Re_s which is the ratio of rotational Reynolds number Renand Reynolds number Re_s. On the other hand, CFD analysis suggests that the backward flow exists along r-axis, which is caused by the adverse pressure gradient. It is suggested that the transition radius also depends on the balance between the inertial force and the force caused by the adverse pressure gradient.
