J2240303 High-Temperature Tensile Testing of Single Crystal Silicon Micro Structure in Vacuum Using Concentrated Infrared Light Heating

Abstract

High-temperature tensile testing for single crystal silicon microstructure up to 600 ℃ was conducted to reveal the size effect on the fracture properties, especially for the brittle-ductile transition temperature (BDTT). A newly developed tensile testing machine with concentrated infrared light heating was used for testing in a vacuum at high temperature. Beam specimens of 120 μm long, 4 μm wide and 5 μm thick which were designed for <110> tensile testing showed BDTT between 400 and 500 ℃, which is lower than bulk silicon of 600 ℃. The fracture strength also decreased by more than 50 % between the same temperature range, and slips on (111) crystal planes were observed on the fractured specimens. These results indicate that the dislocation slips caused stress concentration to decrease the tensile strength.