J0470102 SiC薄膜のはく離強度に及ぼす界面ナノワイヤの影響

抄録

In order to evaluate the influence of nano-wires formed at interface on delamination strength of SiC films, the nano-wires were formed on high-speed steel substrates by a plasma discharging method, and the SiC film was deposited on the substrate using a sputtering apparatus. The delamination strength was evaluated using the convex edge indent method, where a diamond indenter was indented to the specimen with convex edge using a nano-indenter. The result showed that abrupt increment of the displacement of the indenter occurred at the film delamination. The interfacial fracture toughness of the specimen with the nano-wires was around three times higher than that without the nano-wires. The interfacial fracture toughness decreased with increasing normalized base area of the nano-wires due to cracking of the film.