Host: The Japan Society of Mechanical Engineers
Name : Mechanical Engineering Congress,Japan
Date : September 11, 2016 - September 14, 2016
Si power devices are used in various places such as home & office, power plant, transportation and industry. The devices consume much electrical energy at conversion of the currency and voltage. And then the efficiency of the devices has been improved for a long time in order to reduce the consumption of the energy. However the efficiency of Si semiconductor will have reached to the theoretical limitation in the near future, but the operating temperature and frequency have to been increased higher in order to improve the efficiency of electrical conversion. Therefore WBG semiconductors such as SiC and GaN with many benefits to save energy are expected as the next generation of Si semiconductors. In this study, the quality and reliability for die bonding at low cost Ag sintering paste were researched. The Ag flakes start to sinter above near 200°C and almost finish to sinter at 250°C. It was revealed that the die bonding strength of samples with Ag flake paste more stable than Ag nanoparticles paste after being subjected to 1000cycles at temperature range of -40 to -180°C.
