The Proceedings of Mechanical Engineering Congress, Japan
Online ISSN : 2424-2667
ISSN-L : 2424-2667
[volume title in Japanese]
Session ID : F012004
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Fabrication of pure silicon for power devices and its application
Koichi KAKIMOTO
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Abstract

This paper focused on crystal growth of pure silicon for high power devices. This paper focuses on how silicon is contaminated by carbon and oxygen during crystal growth. Then, we discuss other origin of lifetime degradation as well as light elements such as oxygen and carbon incorporated in silicon crystals.

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© 2016 The Japan Society of Mechanical Engineers
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