難加工素材（SiC, GaN, Diamond）の加工に向けた プラズマ融合 CMP プロセスの開発

―GaN 基板における表面酸化反応の調査―

抄録

We are aiming to construct the processing model in plasma fusion CMP for a further highly efficient processing. In this study, the surface oxidative reaction of the Gallium Nitride substrate was investigated by irradiating oxygen plasma. The increase of oxide was confirmed on the Gallium Nitride substrate surface after oxygen plasma irradiation. And we obtained the basic insight that the rate of oxidation changes by thickness of the oxidation layer on the substrate. We guessed at the state of processing progress of the Gallium Nitride substrate in plasma fusion CMP.