年次大会
Online ISSN : 2424-2667
ISSN-L : 2424-2667
2016
セッションID: S1630103
会議情報

グリーンデバイス用結晶基板の加工プロセス技術の研究
- SiC 基板の加工時間短縮を実現する新規プロセス開発 -
土肥 俊郎山崎 努瀬下 清大坪 正徳塚本 敬一菅野 俊彦市川 大造宮下 忠一高木 正孝佐伯 卓會田 英雄
著者情報
会議録・要旨集 フリー

詳細
抄録

In this study, we aim to improve the productivity of the next generation semiconductor substrates (such as SiC, GaN, Diamond etc.) through reduction of process time and production cost. Thus, our purpose is to contribute to the wide-spread usage of green devices. Here, we have developed the world's first special viscoelastic dilatancy material polishing pad which is sensitive to process conditions. We also developed a high-speed / high-pressure processing machine which can achieve high efficiency polishing of hard-to-process materials. Combination use of the developed polishing pad (Dilatancy pad® : Fujibo Ehime Co., Ltd.) and the developed processing machine (SLM-140H : Fujikoshi Machinery Corp.) has made it possible to reduce the total processing time to below one fifth of conventional processing time, which is typically required in the conventional device production. This polishing process could achieve high-efficiency and high-quality simultaneously, which are trade-off relationship in the conventional process. Considering a significant reduction of the production cost is anticipated (operating cost of the processing machine, slurry consumption, etc.), we hope that this polishing process would be contributed to the productivity improvement of the next generation semiconductor devices.

著者関連情報
© 2016 一般社団法人 日本機械学会
前の記事 次の記事
feedback
Top