Si 単結晶におけるフォノン・電子平均自由行程のキャリア濃度依存性評価

抄録

In this study, we evaluated the carrier concentration dependence of phonon and electron mean free paths in single crystal Si. The phonon group velocity was derived using the nanoindentation method, and the thermal conductivity was derived using the laser spot periodic heating method. The phonon mean free path was derived by combining them. In addition, electron mean free paths were calculated, and the carrier concentration dependence on phonon and electron mean free paths were evaluated. As a result, both phonon and electron mean free paths were exhibited in the order of 10^-8 -10^-9 m, and were found to show a similar behavior depending on the carrier concentration.