Strength Control of Silicon MEMS using electron beam induced Silicon Nanodots

抄録

In this presentation, a new method for active control of the strength of SiO₂ film using Si nanodots (Si-NDs) is proposed. An electron beam (EB) irradiation creates Si-NDs in an SiO₂ film. The number, size, and distribution of the Si-NDs in the film can be controlled by EB irradiation energy. Since Si has higher fracture toughness than SiO₂, a crack, initiated in SiO₂, propagates into the film while preventing Si-NDs during fracture. Consequently, the fracture of SiO₂ film can be controlled by Si-NDs, leading to active control of strength for SiO₂-coated Si microelectromechanical systems (MEMS).