Abstract
Surface-activated bonding, also known as room-temperature bonding, uses fast atom beam sources to create high-performance substrates. This technique is used to bond substrates with different coefficients of thermal expansion, such as those in surface acoustic wave filters substrates for next-generation (5G and 6G) communications. This bonding technique is also expected to be utilized for three-dimensional wafer stacking of semiconductors in the future. According to previous studies, it has been confirmed that the irradiation performance of a conventional fast atom beam source can be improved by applying a bidirectional magnetic field. However, a quantitative evaluation of particle emission suppression has not yet been achieved. In this study, we evaluated the quantitative lifetime of the bidirectional magnetic field-applied fast atom beam source, which had not been quantitatively evaluated before by measuring particle emissions from a fast atom beam source in-process. The experimental results confirmed that the lifetime of the bidirectional magnetic field-applied fast atom beam source is at least 1.5 times longer than that of the conventional saddle-field type fast atom beam source. This result indicates that applying of bidirectional magnetic fields to fast atom beam sources is an effective means to suppress particle emission.
