年次大会講演論文集
Online ISSN : 2433-1325
会議情報
1160 Jet-CVD プロセスの多重スケール解析
崎山 幸紀高木 周松本 洋一郎
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会議録・要旨集 フリー

p. 101-102

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抄録
Chemical vapor deposition (CVD) process composes a complex system, where chemical reaction and heat and mass transfer interact with each other. And these macro-scale phenomena are deeply related to the micro-scale mechanics. Hence multi-scale analysis is required to understand these complicated phenomena. First, the new pair potential model of SiH_4 molecule was constructed using ab initio molecular orbital calculations. Next, many binary collisions between SiH_4 molecules are simulated by classical trajectory calculations with various initial conditions. Through the statistical analysis, the total collision cross section model and the probabilistic scattering model for polyatomic molecules are constructed. At last these models are introduced into the DSMC simulation and the thermofluid structure in the Jet-CVD reactor is calculated.
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© 2002 一般社団法人日本機械学会
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