The residual stresses on aluminum wiring in a resonance scanning mirror, which is one of micro electro mechanical systems (MEMS), were measured using a synchrotron radiation source. The aluminum wiring has the width of 40μm and the thickness of 4μm. The aluminum wiring was deposited by a sputtering method on a silicon substrate. The x-ray stress of the aluminum wiring increased with increasing applied tensile strain. Then the x-ray stress was saturated at 0.20% and has steadied till 0.24%. The tensile residual stress was occurred on the aluminum thin film and it decreased when the thin film was etched in the wiring shape.
