年次大会講演論文集
Online ISSN : 2433-1325
セッションID: 911
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Cat-CVD法により形成したSiNx膜の応力制御(S05-3 薄膜の強度物性,S05 薄膜の強度物性と信頼性)
高野 昌宏部家 彰仁木 敏一米澤 保人南川 俊治室井 進増田 淳梅本 宏信松村 英樹
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Silicon nitride (SiN_x) films were deposited on Si substrates at 80℃ by using a catalytic chemical vapor deposition (Cat-CVD) technique to investigate the optimal deposition condition. SiH_4 flow rate was varied from 6 to 18 sccm. It is shown that the stress, Young's modulus, fracture toughness and film composition strongly depend on SiH_4 flow rate. These changes of film properties are related to the gases desorption from growing surface. The amount of the gases desorption reaction depends on deposition rate, that is, the rate of the Si-H insertion reaction. The desorption of hydrogen and ammonia gases from growing surface causes the shrinkage of the film surface, which generates tensile stress. Also, SiN_x films with high hydrogen contents show low stress, low Young's modulus and high fracture toughness.
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