ナノスケール押込みによる半導体量子ドットの発光特性評価(S05-5 ナノ・マイクロ構造体の信頼性,S05 薄膜の強度物性と信頼性)
詳細
Marked enhancement of photoluminescence of InGaAs/GaAs quantum dots(QDs) was observed by the nanoindentation of the light-collecting fiber nanoprobe onto the sample surface. In order to analyze its mechanism, calculations of the nanoprobe-induced strain and the energy-band profiles in the bulk GaAs surrounding InGaAs QDs have been performed on the bases of linear continuum elastic theory and six-band strain Hamiltonian. The calculations have revealed that the confinement potential for light holes was generated by the nanoprobe indentation. The results obtained in this study show that nanometer-scale strain modulation by nanoprobe indentation has potential for the investigation of semiconductor nanostructure physics.
