抄録
The influence of convection in a melt on the compositional uniformity and crystallinity of the TLZ-grown In_<0.3>Ga_<0.7> As crystals has been investigated by growing crystals with various shapes and dimensions on the ground. When the crystal diameter was reduced to 2mm, compositionally uniform single crystals have been grown, while no homogeneous nor single crystals were grown when a crystal diameter was increased to 10mm. These results suggested importance of suppressing convection in a melt during crystal growth by the TLZ method in the view points of maintaining concentration gradient and suppressing constitutional supercooling ahead of the growth interface. We then applied the TLZ method for substrate preparation by growing plate shaped crystals with suppressing convection by reducing the thickness of the plate. We report relationship between crystal quality and convection magnitude in the TLZ method.
