抄録
It is very important to grasp the stress/strain states in micro scale area. In this study, Raman microspectroscopy was applied to the measurement of the components of stress/strain in the single crystal sapphire and polycrystalline alumina. First, the relationships of A_<1g> and E_g modes between the change of Raman shift and strain components were theoretically derived, based on Energy change under mechanical loading. In theses relationships, the all parameters necessary to determine the components of stress/strain were found, and the determination method of these parameters was shown. Next, in order to determine these parameters experimentally, four point bending tests of single crystal sapphire were conducted. In A_<1g> and E_g modes, the change of Raman shift was liner to the applied strain. Last, the stress measurement around the notch root in the single crystal sapphire was performed. The measured strains were good agreement with the FEM results. Therefore, the applicability of Raman micro spectroscopy to measurements of stress/strain in micro scale area was confirmed.
