抄録
The novel chemical vapor deposition CVD is proposed to improve several kind of problems such as the adhesion precursor particle inside precursor supply line and formed film quality. In the novel CVD named Flashing Spray CVD(FS-CVD), liquid precursor through the injector directly to CVD chamber with lower chamber pressure as intermitted spray and flash boiling spray. Normally, the ambient pressure is kept the lowest in the chamber because the vapor pressure of precursor is low. The low saturated pressure precursor can be converted into high saturated pressure properties by mixing the solution due to the vapor-liquid equilibrium through two phase region in P-T diagram. In this study, TEOS and n-pentane were used as mixed solution. The vapor formation speed and distribution of flashing spray was observed by the image of LIF and Mie scattering. As the result, the vapor formation speed of flashing spray form the injector become to constant speed at the lowest ambient pressure. Further, the flash boiling was promoted due to optimum spray shape.
