J0103-1-2 nMOSFET内部の応力分布を考慮したデバイスDC特性変動シミュレーション(電子情報機器,電子デバイスの強度・信頼性評価と熱制御(1))

小金丸 正明; 吉田 圭佑; 池田 徹; 宮崎 則幸; 友景 肇

doi:10.1299/jsmemecjo.2009.6.0_49

The proceedings of the JSME annual meeting

Online ISSN : 2433-1325

2009.6

Session ID : J0103-1-2

DOI https://doi.org/10.1299/jsmemecjo.2009.6.0_49

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J0103-1-2 Device simulation of DC characteristics shifts induced by stress distribution in nMOSFETs

Masaaki KOGANEMARU, Keisuke YOSHIDA, Toru IKEDA, Noriyuki MIYAZAKI, Hajime TOMOKAGE

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Keywords: residual stress, nMOSFET, finite element analysis, device simulation, electron mobility

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Abstract

The effects of stress on the DC characteristics of n-type Metal Oxide Semiconductor Field Effect Transistors (nMOSFETs) were evaluated by mechanical stress simulation and drift-diffusion device simulation (multi-physics simulation). The simulation focused on the impact of the stress distribution in the nMOSFETs. From the simulation results, it was demonstrated that the stress distribution in the device affected the DC characteristics of the device.

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