The proceedings of the JSME annual meeting
Online ISSN : 2433-1325
2009.6
Session ID : J0103-3-5
Conference information
J0103-3-5 Reduction of Thermal Contact Resistance by Using Aluminum Thin Film under Low Contact Pressure Region
Tetsuro OGUSHIHiroshi TAKEMURAYoshihide IMAMURAMasakazu NAKANISHI
Author information
CONFERENCE PROCEEDINGS RESTRICTED ACCESS

Details
Abstract

We tried experimentally to reduce the thermal contact resistance by using aluminum thin film under low contact pressure region from 10 to 1000 kPa. As the results of the experiment, the following conclusions were obtained. (1) In spite of binal interfacial surfaces, the aluminum thin films of O-temper and F-temper as filler materials showed 1.0〜1.5 times and 1.4〜2.0 times larger thermal contact conductance than the bare contact condition, respectively. It is due to the simultaneous effects of reduction of effective interfacial thickness and increase of real contact area ratio. (2) The aluminum thin films with vacuum pump oil or phase change sheets on the double surfaces of the film showed 4〜5 times and 4〜7 times larger thermal contact conductance than the bare contact condition, respectively. It is mainly due to the increase of the thermal conductivity of the interfacial material. (3) The experimental data were well correlated by using effective interfacial thickness and real contact area ratio.

Content from these authors
© 2009 The Japan Society of Mechanical Engineers
Previous article Next article
feedback
Top