S1303-2-4 SiC単結晶の酸化剤援用研磨とそのメカニズム([S1303-2]先端材料と加工(2))

抄録

An efficient power device is requested because of the CO_2 reduction. Because generation of heat is a little and the thermal conductivity is also high, the power device that composes on single-crystal SiC can be light miniaturized. However, because time hangs in making to the specular as for single-crystal SiC substrate, the cost of manufacturing is high. The high efficiency polishing that aimed at the high efficiency grinding in this report, invoked the oxidant to polishing single-crystal SiC, and used the ceria abrasive grain whose hardness is lower than single-crystal SiC was tried. High efficiency of 1300nm/h or more was obtained in both Si-face and result C-face, and surface-roughness Ra=0.2nm in Si-face was obtained. At this time, it turned out that there was no valence change of the Ce atom as a result of measuring XPS before and after polishing the ceria abrasive grain used.