Abstract
It is reported that specific infrared ray is preferentially emitted from the surface of micro meter order periodic structure of a semiconductor, called infrared photonic lattice. In micro-fabrication of the silicon surface, photolithography is generally used as a manufacture method, however it is not suit for the small production of advanced meta-materials. In contrast, the machining method can produce the lattice of arbitrary shape. In this study, thermal oxidized surface of (110) single crystal of silicon was scraped with a diamond pen to remove the oxidation mask, and was etched in KOH solution to make comb-shaped Si stripes of 15 or 20um wide and 15 or 20um depth. The specimen was Au coated by DC sputtering. 9 and 13 urn infrared light were preferentially emitted from some of the specimen, which was heated at 673K.
