抄録
This paper describes a method for analyzing local stress in resonating single-crystal silicon (SCS) microstructures using micro Raman spectroscopy. The support beams of fan-shaped resonators with five different crystallographic orientations are used as specimens. The beam dimensions are same, which are 30μm long, 10μm wide and 5μm thick and it has a 4-μm-deep notch in its center. Raman spectra at the notch tips were measured during resonant vibrations. The observed spectra are broadened by stress oscillation. These spectra broadening are theoretically analyzed by time integration of no-stress spectra with stress distribution analysis using finite element method. The analyzed and measured spectra of the (100) Si specimens showed good agreement, which indicates the validity of this stress measurement method.
