抄録
The characteristic of a Fast Atom beam (FAB) manufacturing process for Si etching, SiO_2 etching, sub-micro etching, and deep etching is investigated by use of a FAB manufacturing machine. The results concerning the side etching and etching rates show the difference between FAB manufacturing and Reactive Ion Etching (RIE) manufacturing. Furthermore, the micro motion covert mechanism with sub-micro dimension hinges is made by use of the FAB manufacturing machine, and its input-output displacement relationship is investigated experimentally.
