The Reference Collection of Annual Meeting
Online ISSN : 2433-1333
VIII.03.1
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Numerical calculation of Growth process of silicon in nano, micro and macro scales
Koichi KAKIMOTOAtsushi MURAKAWAHideo ISHIILi jun LIUTakashige SHINOZAKI
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CONFERENCE PROCEEDINGS FREE ACCESS

Pages 259-260

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Abstract
Thermal conductivity of solid silicon as a function of mole fraction of isotope was investigated by molecular dynamics simulation. An empirical potential of Stillinger-Weber potential was used to speculate thermal conductivity of isotope silicon. The equilibrium molecular dynamics based on Green-Kubo's formula was used to investigate thermal conductivity of silicon as a function of mole fraction of isotope. The calculation clarified that thermal conductivity of mixed isotope silicon has a half value of that of pure isotope silicon. The calculation also investigated that pure isotope with light mass has a large thermal conductivity.
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© 2003 The Japan Society of Mechanical Engineers
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