M&M材料力学カンファレンス
Online ISSN : 2424-2845
セッションID: 632
会議情報
632 PbTiO_3の応力誘起ドメインスイッチングに関する第一原理解析(OS11-1 電子・原子レベルのマルチシミュレーションとその応用,OS11 電子・原子レベルのマルチシミュレーションとその応用)
嶋田 隆広梅野 宜崇北村 隆行
著者情報
会議録・要旨集 フリー

詳細
抄録
Atomistic and electronic structures of the 90° domain wall (DW) in PbTiO_3 are investigated using ab initio (first-principles) calculations based on the density-functional theory (DFT). At the domain wall, the magnitude of polarization decreases by 20% from that of bulk and the polarization direction rotates by 90 degrees. Furthermore, we have studied the domain switching which is an abrupt movement of the domain wall induced by shear stress. Our simulation demonstrates that the domain wall begins to move in the normal direction to the wall when the stress reaches at the critical value of 152MPa. During the domain switching, a covalent Pb-O bond at the center of DW breaks and another Pb-O bond is newly constrcuted.
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© 2007 一般社団法人 日本機械学会
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