OS1310 偏光顕微ラマン分光法を用いた単結晶Siのひずみ・応力測定

抄録

The measurement of stress/strain components in Si wafer on microscale area has been developed. In this study, micro-Raman spectroscopy with a device for controlling the polarization direction of irradiation and scattering lights was proposed in order to decompose a single triply degenerate Raman peak in Si. From polarization analysis of backscattered Raman spectrum for (001), (110) and (111) Si wafers, three independent Raman peaks could be decomposed for only (111) Si wafers by determining the polarization direction corresponding to crystallographic orientation of specimen. Measurement of Raman shift change in (001) Si wafers under uniaxial and equi-biaxial stress condition was measured. In both conditions, the relationships between Raman shift change and applied strain were linear function, and phonon deformation potentials were determined from these relationships. The obtained values were good agreement with the values reported in other papers. Therefore, three independent Raman peaks were able to be evaluated by polarized micro-Raman spectroscopy.