Abstract
Microscopic strain localization in copper (Cu) micro-interconnection, which connects through-hole electrodes in a three-dimensional chip stacking LSI, is examined by using the crystal plasticity finite element method analysis. Analytical models composed of 20 and 1900 grains are prepared on the basis of a nucleation and growth model. Strain localization appears in the models owing to the deformation constraint among grains. Stain concentration in the 1900-grains model is larger than that of the 20-grains model.
