抄録
Sub-crystal grain scale adhesion strength of the interface between Cu line and insulation layer in LSI interconnect systems was evaluated by performing fracture test with 100nm-scale cylindrical specimens fabricated by focused ion beam. Furthermore, the correlation between interface adhesion strength and crystal orientation was investigated by observing the electron backscattering diffraction image at the footprint of the specimen after the fracture test. As a result, the evaluated adhesion strength strongly depends on the crystal orientation of Cu surface facing to the interface. This result suggests that the scatter of the local adhesion strength is caused by the microstructure of Cu line.
