Abstract
A new highly sensitive strain measurement method has been developed by applying the change of the electronic conductivity of CNTs. In order to design a new sensor using CNT, it is very important to control the shape of the MWCNTs. Thus, the method for controlling the shape of the MWCNTs was developed by applying a chemical vapor deposition (CVD) method. It was found the shape of the grown MWCNT can be controlled by changing the average thickness of the deposited iron particles and the deposition temperature. The maximum strain sensitivity obtained under the application of uniaxial strain was about 10%/1000-μstain (gauge factor: 100). Two-dimensional strain sensor has been successfully developed by applying thin-film processing on a silicon wafer.
