抄録
We conducted uni-axial tensile testing using electrostatic-force grip on single crystal silicon thin film of <111> direction. The specimens were fabricated on (110) SOI wafer (length: 120 μm, width: 5 μm, thickness: 5 μgm) and went through 3 different conditions of patterning process composed of Bosch process and treatment of surface residue. As a result, improvement of surface morphology brought increase of average tensile strength from 1.9 GPa to 3.6 GPa. SEM observation of fractured specimens shows that, regardless of processing conditions, the relationship between the tensile strength and the size of damage on the top corners can be expressed with a common equation. This result suggests that the damage on the top corners was dominant for the fracture of this specimen.
