抄録
This paper reports on two types of fabrication methods for Si nanowires (NWs) using focused ion beam (FIB), photolithography, TMAH anisotropic wet-etching, and sacrificial oxidation. Type A specimens made from silicon-on-nothing (SON) membranes are produced by FIB system's probe manipulation and film deposition functions. The mean Young's modulus of FIB-fabricated NWs evaluated by tensile testing in SEM using electrostatic actuated MEMS device is 129 GPa. After vacuum annealing, the Young's modulus is increased to 168 GPa. Type B specimens are produced by wire-thinning technique using sacrificial oxidation and oxide film removal. We succeeded in making freestanding bridge Si NW with the width of 76 nm.
