ストレスマイグレーションを利用したAlナノワイヤの成長に及ぼすAl薄膜構造の影響

抄録

Nanowire (NW) is one-dimensional nanostructure with the diameter in nanoscale. Currently, we can fabricate NWs made from metal, metal oxide and semiconductor which could be utilized in various applications. In our previous study, we investigated a new fabrication method of Al NWs with high growth density by stress migration. It is generally known that Al is high conductivity and inexpensive material, therefore this method for mass production of Al NWs has a big advantage. However, the mechanism of fabrication has not been clear. In this study, we investigated the effect of surface roughness and etching depth induced by focused ion beam etching on the growth density of Al NWs. As a result, we found that etching depth strongly affects the growth density of Al NWs.