反応性イオンエッチングを施した単結晶シリコン表面の機械的性質に及ぼす水素の影響

抄録

This paper presents plastic deformation behavior on silicon surface of both defect and hydrogen. Two groups of silicon sample with/without surface damage introduced by reactive ion etching (RIE) and exposure to hydrogen plasma to introduce hydrogen into crystal, thus four types of samples were prepared. Depth profile and trapping state of hydrogen atoms diffused into each samples were measured by TDS and TOF-SIMS. Nanoindentation curve of each samples were compared under deep and shallow indentation depth. As a results, there found on change in indentation depth under same load level between two case with/without exposure to hydrogen plasma. In contrast to this, surface damage and hydrogen had significantly deeper indents than the other cases. These results suggested that plastic deformation of silicon is enhanced due to synergy effect of both defect and hydrogen even at room temperature.