Host: The Japan Society of Mechanical Engineers
Name : [in Japanese]
Date : October 07, 2017 - October 09, 2017
Zinc oxide (ZnO) is a representative wide band gap semiconductor and have long been used as a main constituent material of varistors because of its highly nonlinear current-voltage characteristics. Recently, ZnO has received growing interest due to its potential application in short wavelength optoelectronic devices as a substitute to gallium nitride. Although a large number of studies have been performed so far, most of them aimed to further develop the applications or to control point defects and grain boundaries, both of which play an important role on functional properties in ZnO. On the other hand, it seems that structure of dislocations, which dominate mechanical property and also affect functional property, have not been studied enough. In the present study, therefore, we aim to investigate atomic structure of a basal dislocation in ZnO using bicrystal experiment. It is suggested that a basal dislocation dissociate into two partial dislocations.
